STUDI NUMERIK EFEK RESONANSI PADA SUMUR KUANTUM (QWs) InxGa1-xAs/InP TENSILE STRAINED

ABSTRACT
Jumiarti Andi Lolo. Numerical Study of Resonance Effects on Quantum Wells
(QWs) InxGa1-xAs/InP Tensile Strained
(Supervised by Dr. Paulus Lobo Gareso, M.Sc and Eko Juarlin, S.Si, M.Si)
The effect of resonance on material semiconductor of InxGa1-xAs/InP Tensile
Strained has been investigated using a numerical methods. In this study, the
structure of the double barrier material of InxGa1-xAs/InP Tensile Strained is
modeled using the transfer matrix method with symmetric width barrier layers.
The energy used was varried from 0 to 1 eV with variation of a bias voltage. The
result showed that for the negative bias voltage, the transmission coefficient
increased as the bias voltage was decreased, while for positive bias voltage, the
transmission coefficient and the bias voltage increased. Transmission coefficient
and energy were comparable to the energy variation.